SBIR-STTR Award

This program will develop an efficient millimeter waveguide and microstrip integration for the 75 ghz to 110 ghz band. This integration will provide a transition suitable to interface with semiconductors. The waveguide and microstrip integration will be incorporated into a solid state noise generator. Frequency of the end product noise generator will include the 94 ghz point.

The phase II program will yield a ripple free, optimum flatness full waveguide band noise source in wr-10 waveguide. A ruggedized broad band noise source for use in systems having severe environmental requirements will also be developed in wr-10 waveguide. These solid state noise sources will be readily reproducible. The work needed to develop these and products will include optimizing the diode chip types to most effectively interface with millimeter wave structures. The noise source structure development work will proceed concurrently with the diode work. The noise source structures to be developed will be two very different types. One will be an essentially minimum parasitics structure, the second variety will accommodate a ceramic package will a bonded contact. Preliminary work accomplished in phase i indicates both types are realizable. The minimum parasitics structure is to provide a noise source which will improve the state of the art of noise figure measurements in the wr-10 waveguide band. Noise source specifications will include a high enr output from the diode, low diode junction dissipation, and optimum ripple free and flat output. The noise output will be able to be attenuated so as to provide low vswr for noise figure measurements.