SBIR-STTR Award

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Advance manufacturing of N-face GaN
Award last edited on: 5/29/2023

Sponsored Program
STTR
Awarding Agency
DOD : AF
Total Award Amount
$50,000
Award Phase
1
Solicitation Topic Code
AF21B-TCSO1
Principal Investigator
David Lee

Company Information

Future Semiconductor Business Inc

228 Colony Drive
Charlottesville, VA 22903
   (434) 234-2033
   N/A
   www.fsb-int.com

Research Institution

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Phase I

Contract Number: 2022
Start Date: The University of Vi    Completed: 11/4/2021
Phase I year
2022
Phase I Amount
$50,000
N-face orientation (000Ä«) GaN-based high electron mobility transistors (HEMTs) facilitates very low specific resistance ohmic contacts and a natural confining electron back barrier over structures grown on the conventional Ga-face. For application of phot

Phase II

Contract Number: FA864922P0032
Start Date: 2/5/2022    Completed: 00/00/00
Phase II year
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Phase II Amount
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