SBIR-STTR Award

Efficient, Pixeled, and Electronically Controllable Wafer Scaled NV Centers for Advancement of Quantum Applications
Award last edited on: 9/20/21

Sponsored Program
STTR
Awarding Agency
DOD : AF
Total Award Amount
$150,000
Award Phase
1
Solicitation Topic Code
AF20A-T002
Principal Investigator
Ratnakar D Vispute

Company Information

Blue Wave Semiconductors Inc

6208 Three Apple Downs
Columbia, MD 21045
   (301) 706-8833
   info@bluewavesemi.com
   www.bluewavesemi.com

Research Institution

University of Oklahoma

Phase I

Contract Number: FA8650-20-P-5011
Start Date: 6/16/20    Completed: 12/16/20
Phase I year
2020
Phase I Amount
$150,000
This STTR Phase I project proposes to develop innovative heterojunction quantum optical switchable diode for quantum technology applications and quantum technology hardware developers. To eliminate technological barriers, we are teaming with the University of Maryland College Park (STTR-partner) to support feasibility studies and demonstrate electronically switchable 2D quantum Schottky devices. The main features of the project are: 1) scalable thin film process for quantum defect centers, 2) fabrication of innovative pixels of switchable quantum optical Schottky diode fast switching device, 3) characterizing and analyzing quantum processes addressable in quantum devices, and 4) bridge the gap from R&D to commercialization of quantum technologies.  Phase I feasibility studies include optimization of defect centers from the surface of the epitaxial layers integrated on compatible scalable substrates and enhancement of optical signals through surface optical engineering accounting high quantum efficiency of measurements. The multilayer and epitaxial engineering of defect centers pixeled through innovatiove layers will allow localized, addressable and electronic control of quantum states.  We plan to develop new device architecture using its 2-dimentional device structures with an optimum concentration of quantum centers for quantum optical process and increase efficiency of optical process and emission by 15%. Then develop and feasibility test active control of the charge state of a single defect center by using transparent metal/diamond nanoscale Schottky junction optical devices. Overall goal is to lead the development of advanced quantum sensing system for DOD customers and quantum communication market and plan for commercialization. Based on the success of this Phase-I STTR, further activities will expand into Phase II proposal, manufacturing and scale-up requirements of the DOD customers working on quantum technologies. The benefits of this product and technology to DOD are to apply newly developed technologies and/or processes to advance the quantum enabling technologies and applications advancing scientific and military dominance for national security interests.

Phase II

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Start Date: 00/00/00    Completed: 00/00/00
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