
Space Qualifiable Radiation Hardened Compound Semiconductor Microelectronic Device TechnologyAward last edited on: 10/19/2015
Sponsored Program
SBIRAwarding Agency
DOD : AFTotal Award Amount
$149,938Award Phase
1Solicitation Topic Code
AF151-148Principal Investigator
Francisco J MachucaCompany Information
Tivra Corporation
2220 Livingston Street
Oakland, CA 94606
Oakland, CA 94606
(415) 871-8476 |
N/A |
N/A |
Location: Single
Congr. District: 13
County: Alameda
Congr. District: 13
County: Alameda
Phase I
Contract Number: ----------Start Date: ---- Completed: ----
Phase I year
2015Phase I Amount
$149,938Benefit:
Monolithic integration of wide bandgap GaN-base electronic devices with high frequency InGaAs-based devices, can result in high performance, more reliable, and lower cost electronic circuits for many civilian, scientific, and military applications, including broad band high power amplifiers (HPAs) and high efficiency power management electronics, as well as lighter and less bulky electronic payload for satellites.
Phase II
Contract Number: ----------Start Date: ---- Completed: ----