SBIR-STTR Award

AlInN Lattice Matched Barrier HEMTs on Low Defect Bulk and Quasi-Bulk III-Nitride Substrates
Award last edited on: 4/16/2019

Sponsored Program
STTR
Awarding Agency
DOD : AF
Total Award Amount
$99,960
Award Phase
1
Solicitation Topic Code
AF08-T006
Principal Investigator
Vinod Adivarahan

Company Information

Nitek Inc

1804 Salem Church Road
Irmo, SC 29063
   (877) 230-5338
   info@nitekusa.com
   www.nitekusa.com

Research Institution

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Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2009
Phase I Amount
$99,960
The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). This will be accomplished using our pulsed MOCVD growth technique to deposit AlInN films at a higher growth temperature than conventional MOCVD deposition methods, resulting in better material quality. The developed material technology will be scaled-up to 2” diameter substrates in Phase II. In Phase II program we will also use the material from Phase I to develop robust sub-micron insulating gate HEMTs. The suitability of their insertion in military systems will be established via a joint processing and device testing program with DOD test labs (WPAFB and the Joint Services Task Team). In Phase III program we will develop a large volume manufacturing technology for epitaxial wafer supply to DoD and commercial outfits in a strategic partnership with a large company. BENEFIT

Keywords:
Alinn, Lattice Matched, Hemts, Low Dislocation Density, Bulk Substrates

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
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Phase II Amount
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