AC Materials proposes development of a 4 micron Ho:BaY2F8 laser pumped by a Cr:LISAF laser in response to Air Force needs for an efficient pulsed source in the 3-5 micron region. Under the Phase I program lasing at 3.9 micron was demonstrated, with over 30 mJ power per pulse. The Phase II effort will be optimization of this Ho laser. Crystal growth of Cr:LiSAF and Ho:BYF will be advanced to enable production of optimized laser crystals. With the optimization of the crystals and cavity geometry, the resulting laser system is expected to provide 200 mJ at 3.9 micron, with a repetition rate of 10 Hz, and acceptable beam quality.
Keywords: Mid Ir Laser, Crystal Growth, Fluoride Host Crystals