Silicon carbide (SiC) is the most promising substrate material for the next generation high power, high frequency power transistors replacing traveling wave tube for radar power applications. Such devices in both, group III nitrides (III-N) and SiC have been under development for these applications. SiC possesses advantages that are unmatched by any other substrate for both III-N and SiC based devices. High frequency power transistors fabricated on semi-insulating silicon carbide (SI-SiC) substrates (via heteroepitaxy or homoepitaxy) will benefit significantly from the substrate's high thermal conductivity to dissipate heat generated during operation. Devices made on SI-SiC substrates have an added advantage of increased frequency performance due to the lower parasitic losses compared to conducting substrates. In addition, SiC is well suited for growth of III-nitrides due to its small lattice mismatch. Reduced lattice mismatch is critical in achieving low defect density layers in heteroepitaxial growth.
Benefits: Semi insulating seilicon carbide (SI-SiC)wafers are key components for producing high power, high frequency microwave transistors for use in high power amplifiers. Devices on this material will be used in fire control radars on military aircraft, terminal guidance for missiles, ground based radar systems for missile defence, satellite and ground based communication systems. The overall impact of devices based on SI SiC is either a 4X to 10X increase in range, power or a significant reduction space requirements for the same power requirement. Commercial applications are primarily required in the telecommunications industry. Cellular base stations, satellite communications (downlinks), and high definition television broadcasts are only the beginning of commercial applications for devices using SI SiC substrates
