SBIR-STTR Award

We propose to develop a new kind of photon detectors based on the photo-induced stress in semiconductor microcantilevers. We will measure the photo-induced stress for various semiconductor materials as a function of a number of parameters such as microcantilever geometry (length, width, thickness), input radiant power, and modulation frequency of input radiant power. This information will allow us to demonstrate the ability of microcantilever photon detectors to sense IR radiation with high sensitivity (D* > 10(11) cm Hz(1/2) W(-1)) and fast response times (<10(-6) s) based on the novel concept described in this proposal. The proposed IR photon detector has the following benefits compared to other IR detectors: (i) no cryogenic cooling, (ii) fast response times, (iii) high sensitivity, (iv) no need for thermal isolation, and (v) low cost due to established monolithic IC fabrication compatibility

The purpose of this project is the development and construction of a new kind of photon detectors based on the photo-induced stress in semiconductor microcantilevers. In Phase I we performed studies on the photo-induced stress for various semiconductor materials as a function of a number of parameters such as microcantilever geometry (length, width, thickness), input radiant power, and modulation frequency of input radiant power. Our results have demonstrated that microcantilever photon detectors can be used to detect IR radiation based on the photo-induced stress caused by the photo-generation of carriers in the semiconductor. With Phase II funding EEG will develop a prototype suitable for field use. The proposed IR photon detector has the following benefits compared to other IR detects: (I) no cryogenic cooling, (ii) fast response times, (iii) high sensitivity, (iv) no need for thermal isolation, and (v) low cost due to established monolithic IC fabrication compatibility