A high-power cw optical source at 1550 nm is a key component of an externally modulated optical transmitter for future optical networks. Due to its high efficiency, reliability, and compact size, an integrated semiconductor MOPA is a promising candidate for achieving high power. However, it is difficult to couple the MOPA output to single-mode fiber in a reliable, compact package. We propose a program to develop a high-power 1550 nm InGaAsP integrated MOPA structure with an on-chip mode converter to simplify coupling to a single-mode optical fiber. In Phase I, we will develop a design for an integrated semiconductor amplifier and mode converter. The design concept will be demonstrated in a working prototype with single-mode fiber coupled output. Predicted output power improvements from a fully optimized, integrated MOPA structure will be modeled and analyzed.|
Benefits: High power optical sources at 1550 nm will improve the dynamic range of externally modulated fiberoptic links used in military applications such as antenna remoting and signal processing. Commercial cable television systems will benefit from high optical source power which will lead to unrepeatered optical distribution networks.