The primary objective of this proposal is to develop and demonstrate a manufacturable process for wafer-scale burn-in of state-of-the-art semiconductor device wafers. The potential technical feasibility of two such techniques was explored in a previous Phase I contract, with positive results. One such approach has been selected as the preferred approach for this Ph II effort. The technique uses a bumped, high-density interconnect "silicon circuit board" to mate face-to-face with the device wafer, providing a functional replacement for the traditional burn-in board. The technical effort is centered on characterizing the quality of the electrical connection, optimizing the burn-in substrate for maximum reusability, and developing the electrical, mechanical, and thermal techniques needed to make the wafer-scale burn-in concept feasible and demonstrable. Two different types of functional device wafers will be configured and tested using the techniques developed herein. The results will be analyzed to determine whether wafer-scale burn-in is in fact an effective substitute for conventional (packaged IC) burn-in.