This SBIR project addresses a novel (not heat assisted switching) use of ferromagnetic/antiferromagnetic interfacial exchange coupling to enhance the magnetic anisotropy and thermal stability of the free layer in a MTJ. Spin Torque Transfer Random Access Memory (STT-RAM) solves the write current scaling problem of Magnetic Random Access Memory (MRAM) by using the spin momentum of the tunneling electrons to switch Magnetic Tunnel Junction (MTJ) memory elements. Common MTJ used in STT-RAM suffers from a reduced thermal stability when optimized for lower current STT switching required for a small memory cell size and low power operation. The proposed approach promises lower STT switching current, higher TMR and adequate thermal stability for a high density non-volatile STT-RAM at fast speed and low cost. The success of this effort will enable STT-RAM to achieve performance and density that surpass mainstream semiconductor memories such as SRAM, DRAM and NOR Flash in both embedded and standalone memory markets, and create new sectors in the semiconductor industry. Consumers will buy standalone memories in mobile devices such as cell phones, iPod and digital cameras. Corporations like Qualcomm and Freescale can use this technology in embedded memories
