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SBIR-STTR Award
10
Novel technology for high pure GaN thick layers for advanced X-Band electronic devices
Award last edited on: 2/21/2007
Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$99,994
Award Phase
1
Solicitation Topic Code
MDA04-055
Principal Investigator
Vladimir Dmitriev
Company Information
Technologies & Devices International
(
AKA
: TDI Inc)
12214 Plum Orchard Drive
Silver Spring, MD 20904
(301) 572-7834
welcome@tdii.com
www.tdii.com
Location:
Single
Congr. District:
03
County:
Montgomery
Phase I
Contract Number:
----------
Start Date:
----
Completed:
----
Phase I year
2004
Phase I Amount
$99,994
TDI proposes to develop high purity GaN materials having room temperature carrier concentration from 1014 cm-2 down to 1012 cm-2 using novel technological approach based on advanced hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce epitaxial layers and bulk GaN materials with low defect density and high carrier mobility. Recently, TDI demonstrated HVPE growth of GaN and AlGaN layers with record low background impurity concentrations. These results opened an opportunity to develop ultra pure GaN and AlGaN materials including pure non-compensated semi-insulating GaN substrates and epitaxial layers for advanced radar electronics. The Phase I project is focused on investigation of HVPE technology for pure undoped GaN and AlGaN layers. The main goal of the Phase I work is to prove the concept and demonstrate pure GaN materials with carrier concentration in the 1013 - 1014 cm-3 rage. The Phase II research program will be focused on further reduction of background carrier concentration in pure GaN and AlGaN materials and demonstration of GaN-based devices with increased power and efficiency for X-Band Radars
Phase II
Contract Number:
----------
Start Date:
----
Completed:
----
Phase II year
----
Phase II Amount
----
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