SBIR-STTR Award

The goal of this proposal is to demonstrate large area manufacturing technology for high performance AlGaN/GaN high electron mobility transistors (HEMTs) for radar and RF applications. TDI proposes to develop novel epitaxial technology for HEMTs structures on large area sapphire substrates based on hydride vapor phase epitaxial (HVPE) approach. TDI recently demonstrated the first-ever nitride HEMT grown by HVPE. The HEMT structures were grown on 2" sapphire substrates and when processed at University of Florida demonstrated performance comparable with current MOCVD and MBE technology. This is significant as fabricating the HEMT structure by HVPE gives a greater than 50% cost advantage over industry-standard MOCVD and MBE technologies. TDI achieved another breakthrough recently by demonstrating 4" GaN and 6" AlN epi capability. Combining these technologies provides an innovate approach to achieve low cost manufacturing of high power/frequency nitride HEMT epiwafers.

TDI proposes to develop innovative cost-effective manufacturing technology for thick (>200 microns) low defect GaN and AlN epitaxial materials on large area substrates. Proposed technical approach is based on hydride vapor phase epitaxy (HVPE). The HVPE technology is known to produce GaN epitaxial layers with low defect density and high carrier mobility. Recently, TDI has demonstrated world first 6-inch GaN epitaxy. These results open an opportunity to develop novel technology of low defect thick GaN and AlN materials on large area substrates. The Phase II research program will be focused on defect and stress control in thick crack free AlN and GaN layers. The development involves investigation of deposition process and detailed material characteristics of thick GaN and AlN layers grown on large area substrates by HVPE.

Keywords:
Hvpe, Gan And Aln Materials, Low Defects, Low Cost Technology