This Small Business Technology Transfer Phase I project will develop a silicon carbide (SiC) process technology that will permit control of both the microstructure and macrostructure during the SiC deposition process. This will be done by combining a rapid chemical vapor deposition technique using organosilicon sources combined with a transfer mold technique. Patterned and etched silicon substrates will be used as templates. This approach will enable the growth of three-dimensional SiC structures for advanced microelectromechanical structures (MEMS) and vacuum microelectronic (VME) devices with greater functionality and durability. This microstructural engineering process, if successful, will be applied to the development of SiC components such as gyroscopes, heat engines, nozzles, and sensors for MEMS applications and flat panel displays and RF microwave amplifiers for harsh environments.
