SBIR-STTR Award

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A Novel Approach to Growth of Aluminum Nitride (AlN) Crystals
Award last edited on: 4/4/2002

Sponsored Program
STTR
Awarding Agency
DOD : Navy
Total Award Amount
$69,981
Award Phase
1
Solicitation Topic Code
N00T003
Principal Investigator
Cengiz M Balkas

Company Information

Sterling Semiconductor

22660 Executive Drive Suite 101
Sterling, VA 20166
   (703) 834-7535
   N/A
   N/A

Research Institution

Carnegie Mellon University

Phase I

Contract Number: N00014-00-M-0163
Start Date: 6/5/2000    Completed: 12/5/2000
Phase I year
2000
Phase I Amount
$69,981
In response to Navy N00-T006 STTR, Sterling Semiconductor porposes to investigate a novel approach to the growth of aluminum nitride (AlN) crystals. Preliminary investigation by the PI shows the potential of this technique for growing AlN. It is the goal of this work to investigate and optimize the materials and growth parameters for the feasibility of AlN boule growth.

Benefits:
Aluminum Nitride wafers will be used in a variety of high frequency, high power and optoelectronic device applications.

Keywords:
Aluminum Nitride, Growth , AlN, Crystal

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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