Wafer fusing is proposed for integrating InGaAs avalanche photodiodes (APDs) with silicon VLSI Circuits. A new structure, a silicon heterointerface photodetector (SHIP), which was recently used to demonstrate record gain bandwidth products of 315 GHz, is proposed for integration with the silicon preamplifier. The SHIP detector is predicted to have a larger temperature range and greater temperature and voltage stability, important for military applications. These predictions will be investigated here. Linear and square arrays of SHIP APDs integrated with silicon preamplifiers will be investigated at bit rates from 155 Mbit/s to 2.5 Gbit/s.
