SBIR-STTR Award

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Room Temperature Wet Chemical Growth of Low Dielectric Constant SiO-Based Thin Films for ULSI Microelectronics
Award last edited on: 4/8/08

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$762,895
Award Phase
2
Solicitation Topic Code
BMDO99-014
Principal Investigator
Maria Faur

Company Information

Special Materials Research & Technology

27390 Lusandra Circle
North Olmsted, OH 44070
   (440) 777-4292
   N/A
   N/A
Location: Single
Congr. District: 16
County: 

Phase I

Contract Number: NAS3-99-172
Start Date: 5/25/99    Completed: 11/24/99
Phase I year
1999
Phase I Amount
$62,895
SPECMAT, Inc. proposes todemonstrate the use of its revolutionary Room Temperature Wet Chemical Growth (RTWCG) process to grow low dielectric constant (2
Potential Commercial Applications:
Due to the high interest in developing stable low k inorganic dielectric films (e.g. for surface passivating, ultrathin gate dielectrics, IMDs and ILDs) rapid implementation of this new technology is extremely likely. Based on preliminary results, the low-cost new process has the potential to become the process of choice for many future ICs, from radiation hard ULSI for space and military applications to next generation commercial ICs.

Phase II

Contract Number: NAS3-01080
Start Date: 10/23/00    Completed: 10/23/01
Phase II year
1999
Phase II Amount
$700,000
The goal of this SBIR program is to further develop the new Room Temperature Wet Chemical Growth 9RTWCG) process to grwo low dielectric constant (1.5