Spinnaker Semiconductor will develop its proprietary Schottky barrier CMOS technology (SB-CMOS) for space and other radiation hard environments. SB-CMOS offers a dramatic reduction in parasitic bipolar gain and therefore unconditional immunity to latch-up. It also has greatly increased hardness to node-discharge and other single-event-effects. The proposed SB-CMOS technology features MOS devices with minimum channel lengths of 50 nm and will therefore be ideal for high-speed digital and mixed-signal applications. Anticipated
Benefits: 1) Unconditional immunity to latch-up 2) Greatly increased tolerance to node-discharge and other single event effects 3) 50 nm minimum channel length devices for high unity gain frequency 4) Silicon based, planar technology.
Keywords: Schottky Barrier, Single Event Upset, Cmos, Space Applications, Rad-Hard
