The production of high quality, large area GaN single crystal substrates is perhaps one of the most outstanding issues in III-V nitride materials. The availability of GaN substrates is expected to decrease the defect density of homoepitaxial GaN films, thus paving the path for large lifetime GaN based injection lasers for a myriad of applications. The Gemesis Corporation in cooperation with the University of Florida has developed a novel crystal growth technique that is ideally suited to synthesize high quality diamond single crystals, which require similar processing conditions (pressure and temperature) as GaN. In Phase I of the project we propose to identify the processing chemistries for reproducible GaN single crystal growth, while in Phase II of this project, the focus will be to grow GaN substrates upto 2 inches in diameter.
Keywords: Gallium Nitride Crystal Growth Compound Semiconductor Defect Reduction
