SBIR-STTR Award

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Instrument for Rapid Quantitative and Nondestructive Wafer Microroughness/Surface Quality Evaluation for In-Process Control
Award last edited on: 4/30/2002

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$829,303
Award Phase
2
Solicitation Topic Code
AF95-195
Principal Investigator
Takeo Sawatari

Company Information

Sentec Corporation

6105 Gilbert Lake Road
Bloomfield Hills , MI 48390
   (248) 960-6160
   takeos@aol.com
   N/A
Location: Single
Congr. District: 11
County: Oakland

Phase I

Contract Number: F33615-95-C-5534
Start Date: 4/15/1995    Completed: 10/15/1995
Phase I year
1995
Phase I Amount
$79,850
A new approach to an optical scanning heterodyne microscope is proposed. The system will employ a resolution enhancement technique that will provide rapid quantitative submicron surface deposit and surface roughness measurements on semiconductor wafers. The system will be capable of resolving vertical heights and lateral widths less than 100 Angstroms and have a working distance greater than 10 cm in air or vacuum. In addition, the system will be able to provide and identification "signature" for different materials deposited on the wafer surface. The scanned image of the wafer will provide sharp delineation between surface steps, scratches, and particles whether insulating or metallic. With the rapid response and long working distance, the system can be used for in-process wafer evaluations. Coupled with the systems capability to identify deposits on the wafer surface, the electronically enhanced optical data can lead to analyses through SPA to directly control the processing of silicon wafers in production environments.

Keywords:
Nondestructive Testing Nondestructive Testing Nondestructive Testing Microroughness Microroughness

Phase II

Contract Number: F33615-96-C-5108
Start Date: 8/1/1996    Completed: 8/1/1998
Phase II year
1996
Phase II Amount
$749,453
A new approach to an optical scanning scatterometer is proposed. The system will employ a resolution enhancement technique that will provide rapid quantitative submicron surface deposit and surface roughness measurements on semiconductor wafers. The system will be capable of detecting vertical heights and lateral widths <10 nm and have a working distance >10 cm in air or vacuum. In addition, the system will be able to provide and identification "signature" for different materials deposited on the wafer surface. The scanned image of the wafer will provide sharp delineation between surface steps, scratches, and particles whether insulating or metallic. With the rapid response and long working distance, the system can be used to scan 200 nm wafers in less than 5 min for in-process evaluations. Coupled with the system's capability to identify deposits on the wafer surface the electronically enhanced optical data can lead to analyses through SPC to directly control the processing of silicon wafers in production environments.

Keywords:
Nondestructive Testing Nondestructive Testing Nondestructive Testing Microroughness Microroughness