Alpha Photonic Inc. (API) proposes, to develop an n-type strained layer InGaAs/GaAs multiple quantum well (MOW) structure for normal incident long wavelength (>12 um) infrared (IR) detection. This structure offers high sensitivity and a fast response time. The detection wavelength can be easily tuned by tailoring the MOW structure. The detection mechanism is based on the coupling of the conduction and valence bands, because the relatively narrow bandgap of InGaAs produces an intersubband matrix element for normal incident light. In Phase I, API will analyze the normal incidence mechanism, as well as tunability of wavelengths above the 12 um IR range. Several InGaAs/GaAs MQW structures will be grown using the optimized device parameters, and their optical properties will be assessed.
