Solar Associates proposes to develop an improved sputtering system for III-V semiconductors. The method uses no toxic gases. The energy spectrum of atoms depositing on the substrate will be controlled to an optimum range below 100 ev. Such energy control will remove the harmful effects of high energy neutral bombardment. A sputter deposition system using a surrogate rotating cylindrical magnetron (cf. Patent 5,405,517) will use special magnetic fields and thermionic plasma support. Plasma voltage will be lowered while deposition rate will remain high. The range of energy of arriving adatoms and the stoichiometry of the depositing III-V film will be under real time control. The result will be improved film quality at lower deposition temperatures. The Phase II effort will be threefold. First, build a proof of concept system to optimize sputter yields at low plasma discharge voltages. Second, build a surrogate magnetron sputter source for depositing InAs with real time control of stoichiometry. Third, build a pilot production sputter system using the InAs source. This development will occur in a factory production environment to assure a realistic process evaluation. SPUTTERING, HIGH ENERGY NEUTRALS, III-V SEMICONDUCTORS, NON-TOXIC FILM DEPOSITION, ADATOM,