Stable, chemically inert, low resistivity contacts are required to take advantage of devices being developed utilizing high Te oxide superconductors. The usual disruption in the oxidation state obtained with non-optimum metallization to the superconductor results in a significant degradation of the contact. Current contact technology utilizes noble metals such as Ag,or Au for the interconnections found in most integrated systems. We have recently filed a patent entitled, "Bi-layer and Tri-layer low resistance contact to high Te oxide superconductors," and have demonstrated in Phase I that low resistance multilayer contacts can be fabricated in general purpose laboratory sputering equipment without utilizing ultra-high vacuum chambers. During Phase II we will develop bi-layer and tri-layer contact technology to reduce resistivities to 10(-8) to 10(-10) ohm-cm2 and to optimize the metal connections for eigher thin film interconnects, wirebonds, or solder attachment. A study of the optimum structures for long term electrical, thermal and mechanical stability will be made.
Keywords: high temperature superconductors superconducting devices bi-layer contacts contact resistivity