The main overall objective is to develop a capability for growing 3.0-in (7.6-cm) diameter, 3-kg crystals of CdZnTe suitable for use as substrates for high performance HgCdTe detector arrays. Crystal growth will utilize a new high pressure vertical bridgman method, in which the elimination of quartz, an improved temperature profile and other factors give advantages over other methods. The program will include analysis and modelling, the use of seeded growth to achieve predetermined orientation, and investigations into improving compositional homogeneity. The program will concentrate on a composition of 4 at% Zn, although at least one crystal of 20 at% Zn will be grown as part of the homogeneity investigation. Crystals and wafers will be characterized by an advanced method based on using synchrotron x-rays, in addition to standard methods such as EFD counts, IR analysis and compositional analysis.
Keywords: Crystal Growth Substrates Detectors Arrays Crystal Lattice Morphology Chemical Analys CdZnTe
