High-power, single-mode diode lasers are of considerable interest for optical sources and solid-state lasers systems components because of their performance and reliability. Currently, these devices are in production in Japan using molecular beam epitaxy (MBE) to service the compact-disk laser market. These structures use AlGaAs and operate below 860 nm. A reasonably straightforward extension of AlGaAs quantum well materials using pseudomorphic GaInAs can be made with MBE to extend the wavelength range into the IR up to 1.07 am. This program addresses the materials growth and fabrication technology to develop high power (100 mW) single-mode diode lasers at the wavelengths of 1.047 am and 1.064 am. The epitaxial structures required for these emission wavelengths require that MBE be used to exploit the extreme edge of the pseudomorphic limits of the AlGaAs/GaInAs system. The uniformity in thickness and alloy composition of MBE growth will be used in conjunction with low-cost laser fabrication methods to result in prototype quantities of hermetically sealed single-mode laser devices at the completion of Phase I. The range of applications in solid-state laser systems for NASA include frequency doubled YLF pump sources (a Phase II objective) and injection-locking sources for YAG laser systems.Application for this technology would be in YLF pump sources, injection locking sources, and low-power YAG replacements.quantum well, laser diode, 1.047 nm - 1.06 nm, single-modeSTATUS: Phase I Only
