Cubic boron nitride (CBN) has potential as a high quality, high temperature semiconductor like diamond and SiC. Synthesis of CBN by chemical vapor deposition and physical vapor deposition techniques yielded films of low quality that can not be used for electronic devices. Phase I will develop an innovative laser technique involving Nd:YAG and excimer lasers to grow heteroepitaxial films of CBN on silicon substrate. The technique consists of congruent ablation and evaporation of a high purity hexagonal boron nitride target with the laser beams so that highly energetic species will be created which subsequently bombard the silicon substrate to form CBN. The proposed laser technique also includes methods to minimize particulate formation in the films. Films will be characterized with x-ray diffraction, Raman and IR spectroscopies. Applications of CBN films occur in electronics, optical, and machine tool devices and as an excellent substrate for diamond film growth.
