SBIR-STTR Award

The development of four different doping sources for use within an MBE system is proposed. Two high purity, high uniformity sources for use with Carbon, and two such sources will be developed for use with Tellurium. The purity of the species produced by each cell will be studied with a Residual Gas Analyzer. Recommendations concerning the use of these cells in a solid source MBE system will be summarized in the final report.

Minority carrier lifetimes in the base region of C-doped npn heterojunction bipolar transistors remains unacceptably low. Deep traps caused by the presence of polyatomic carbon complexes are currently believed to be limiting both material quality and device performance. In this proposed effort, two high purity doping effusion cells that produce monomeric carbon flux beams will be refined and made commercially viable. One of these cells will be provided to the Solid State Directorate of the Wright Laboratory for further testing.