SBIR-STTR Award

The low growth temperature enabled by molecular beam epitaxy (MBE) is known to be useful in generating cubic crystalline nitride-based semiconductors. In 2011 Novikov applied the MBE growth technique to achieve free-standing cubic gallium nitride (GaN) templates up to 75 microns thick with a 50mm diameter using standard 1 micron per hour growth rates. In this Phase I effort, OSEMI proposes to apply High Speed MBE growth to the prototyping cubic Boron Nitride (c-BN) templates and free standing substrates. The initial extended MBE growths will be attempted at the 50mm wafer diameter. The goal of the Phase II effort will be to scale the growth technology to 100-200mm diameter template and/or achieve free-standing c-BN substrate wafers to be sold as a product to enable further device development and production by US companies across optoelectronics and extreme environment electronics sectors. Approved for Public Release | 22-MDA-11215 (27 Jul 22)