
Wolfspeed Inc (AKA: Cree Inc~Cree Research Inc) Profile last edited on: 12/4/2023
CAGE: 0C9J8
UEI: JENFAUM1C7L6
Business Identifier: Silicon carbide (SiC) and group III nitrides (GaN) including gallium nitride based semiconductor materials and devices Is this YOUR Company?
Ensure accuracy and completeness of YOUR Company Profile by completing the brief Survey Instrument attached
Do you know about this Awardees?
Let us encourage you to provide any data which would enhance the completeness of this firm's profile.
Location Information
Location: Multiple
Congr. District: 01
County: Durham
Congr. District: 01
County: Durham
Public Profile
Formerly known as Cree, Inc. - Wolfspeed, Inc developed the first commercially viable silicon carbide wafer. Holding numerous patents related to silicon carbide, the firm is the world's largest manufacturer and supplier of silicon carbide wafers and silicon carbide-based semiconductor products. Wolfspeed manufactures silicon carbide-based semiconductor products gallium nitride (SiC) diodes and wafers which work at higher temperatures and voltages than standard silicon wafers. It sells its blue light-emitting devices (LEDs) to companies such as Siemens for manufacturing car dashboard lights, market tickers, and other products. Wolfspeed's subsidiary Real Color Displays makes full-color LED modules used for building large-area video screens (such as the giant screen in New York's Times Square). The company has development alliances with Kansai Electric Power and Asea Brown Boveri, among others. Nearly 75% of sales come from outside the US.
Extent of SBIR involvement
Synopsis: Awardee Business Condition
Employee Range
500+Revenue Range
Over 50MVC funded?
YesPublic/Private
Publicly TradedStock Info
NYSE : WOLFIP Holdings
500+Awards Distribution by Agency
Most Recent SBIR Projects
Year | Phase | Agency | Total Amount | |
---|---|---|---|---|
2000 | 2 | AF | $848,161 | |
Project Title: Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition | ||||
1999 | 2 | Army | $849,593 | |
Project Title: Evaluation of alternative High-Temperature high-Field Dielectrics for SiC Devices | ||||
1999 | 2 | AF | $846,722 | |
Project Title: Development of High Temperature 4H-SiC Power Accufet | ||||
1997 | 2 | Army | $818,946 | |
Project Title: Fabircation of GaN/AlGaN HEMT's on Silicon Carbide Substrates for Millimeter Wave Power Applications | ||||
1997 | 2 | Navy | $663,628 | |
Project Title: High Voltage 4H-SiC Power Devices |
Key People / Management
Charles M Swoboda -- President
Scott T Allen
Gary E Bulman
Calvin H Carter
John A Edmond
Eric C Hunter
Neal F Hunter
Lori A Lipkin
Michael Paisley
John W Palmour
Ranbir Singh
David B Slater Jr
Jeffrey S Vojta
Scott T Allen
Gary E Bulman
Calvin H Carter
John A Edmond
Eric C Hunter
Neal F Hunter
Lori A Lipkin
Michael Paisley
John W Palmour
Ranbir Singh
David B Slater Jr
Jeffrey S Vojta