Date: Jul 01, 2013 Source: Company Data (
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Agnitron Technology announced today their Phase I proposal, entitled "Novel Heterostructure Doping for Optoelectronic Devices", submitted under the National Science Foundation (NSF) FY-2013 Small Business Innovation Research Program Solicitation (NSF 12-605), has been competitively selected for award. Agnitron is partnering on the effort with the University of Central Florida (UCF), represented by Professor Winston Schoenfeld.
The effort will focus on exploiting unique charge carrier phenomenon that occur in compositionally graded structures for nonintentional impurity doping several different compound semiconductor materials. Intentional impurity doping that is traditionally required to functionalize most compound semiconductor materials sacrifices crystal quality which has the impact of degrading electrical properties such as electron mobility or breakdown voltage. These trade offs ultimately compromise the performance of devices. Agnitron's proposed concept shows promise to offer a new approach for heterostructure doping and in some cases, such as ZnO, could finally enable a path for fully exploiting extraordinary material properties. The doping concept will likely spawn new device technology as techniques are refined. Additionally, many foreseeable benefits are expected to exist for significantly enhancing performance of power switches and optoelectronic devices such as photodetectors and LEDs.
Agnitron Technology, Inc. specializes in developing emerging compound semiconductor material and device technologies into profitable commercial products as well as economical custom MOCVD equipment solutions. They currently market sale of UV photodetectors through their company website. Agnitron's diverse team and partners draw from backgrounds in physics, materials science, semiconductor processing and electrical and mechanical engineering. Collectively, this team is credited with more than 400 published manuscripts and over 50 patents. Visit www.agnitron.com for more information.
