SBIR-STTR Award

Ultra-Low-RF-Power Ultra-Wide-RF-Bandwidth High-Optical-Power Low-Loss Wide-Temperature Semiconductor Electro-Optic Modulators based on Silicon-Photon
Award last edited on: 4/14/2019

Sponsored Program
STTR
Awarding Agency
DOD : Navy
Total Award Amount
$79,999
Award Phase
1
Solicitation Topic Code
N13A-T005
Principal Investigator
Yingyan Huang

Company Information

OptoNet Inc

828 Davis Street Suite 206
Evanston, IL 60201
   (847) 425-7585
   info@optonetinc.com.
   www.optonetinc.com

Research Institution

Northwestern University

Phase I

Contract Number: N68335-13-C-0379
Start Date: 8/15/2013    Completed: 3/15/2014
Phase I year
2013
Phase I Amount
$79,999
The proposed project will undertake the research, design, and development of key concepts and technologies for a very-low-voltage high-speed semiconductor electro-optic modulator. Low-voltage high-speed optical intensity modulators with voltage 100GHz, and low optical loss

Benefit:
There are many applications for such modulators. Commercially, there are applications to data centers that need a lot of high-speed data connection cables and each cable will benefit from a high-speed low-voltage electro-optic modulator.

Keywords:
quantum confined stark effect, quantum confined stark effect, RF power, silicon photonics, Wide temperature range, Low Voltage, semiconductor, electro-optic modulator, transmission line.

Phase II

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Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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