We propose an innovative physical vapor deposition process for in vacuo passivation of high aspect ratio HgCdTe surfaces that is capable of conformal coverage of high aspect ratio trench sidewall surfaces. The propose method uses a combination of atomic layer deposition (ALD) and force convection mass transport to circumvent low vapor pressure from low temperature requirement and the associated high stick coefficient of one of the elemental source materials. More importantly, the passivation process and material are essentially the same as a passivation used in production.
Keywords: Hgcdte, Cdte, Passivation, Photodiodes, Mbe, In Vacuo, Atomic Layer Deposition, Deep Trench
