This Small Business Innovation Research Phase I project proposes innovative solid phase epitaxial recrystallization (SPER) of III-N system for development of lowest defect density epi-ready substrate technology for GaN/AlGaN device epitaxy. Our initial results predict defect free recrystallization of III-V nitrides processed under optimum conditions indicating potential for development of low defect density (<10E3/cm2) epi-ready lattice matched AlxGa(1-x)N system with composition x ranging from x=0 to 1. Using Blue Waves SPER process, it is possible to fabricate a wide range of defect free AlxGa(1-x)N thin film alloys over 4 diameter sapphire and SiC substrates in spite of their large lattice mismatch with epitaxially deposited layers. The overall aim of this project is to fully establish the SPER process for the entire range of composition of AlGaN that will provide a sound basis for the development of low defect density GaN epi-ready substrates for device epitaxy of RF electronics and future high-temperature-electronics. With low dislocation density and reduced inherent strain in the single crystal template layers of the SPER epi-ready substrates, newly grown AlGaNGaN RF devices will be expected to have significant improved performance than current devices fabricated from two step heteroepitaxy on SiC and sapphire substrates.
Keywords: Gallium Nitride, Algan, Power Electronics, High-Temperature Electronics, Solid Phase Epitaxial Recrystallization, Rf Devices, Uv Lasers, Epi-Ready Gan Substrate
