SBIR-STTR Award

Transphorm proposes to demonstrate a normally off fast high voltage Gallium Nitride power switch solution. The switch would block to 1000V, have a threshold voltage greater than 2.5 V, and the phase I switch will target an on resistance less than 20 ohm-mm. To accomplish these targets, Transphorm will combine the design requirements of realizing a high (and positive) threshold voltage while maintaining a low total on resistance in one solution. The device will target low dc to rf dispersion or achieve a dynamic on resistance which is within 2x of the static performance. The switch would ultimately be capable of switching at high frequencies (1 MHz or higher) with efficiency in excess of 97%.

Benefit:
This research will demonstrate a low loss high voltage normally off GaN device solution that will be used for compact and high efficiency power conversion applications in both DoD and Commercial areas. These applications include converters and inverters for solar arrays, power supplies, motor drives and hybrid cars and potential to reduce world wide electricity consumption by 10% by penetration into these and other energy conversion areas. The DoD applications that will benefit from the reduced size, weight, cost and enhanced power management capability include electric drives, radar power supplies and transformers on ships, advanced aircraft power converters and generation equipment and efficient ground based hybrid combat vehicles.

Keywords:
enhancement mode, enhancement mode, power switch, GaN, high voltage

Transphorm proposes to demonstrate a normally off fast high voltage Gallium Nitride power switch solution. The switch would block to 1200V, have a threshold voltage greater than 5 V, and the phase 2 switch will target an on resistance less than 15 ohm-mm and current more than 1 Amp. To accomplish these targets, Transphorm will combine the design requirements of realizing a high (and positive) threshold voltage while maintaining a low total on resistance while maintain a low switching resistance. The device will target low dc to rf dispersion or achieve a dynamic on resistance which is within 2x of the static performance. The switch would ultimately be capable of switching at high frequencies (1 MHz or higher) with efficiency in excess of 97%.

Benefit:
1 This research will demonstrate a low loss high voltage normally off GaN device solution that will be used for compact and high efficiency power conversion applications in both DoD and Commercial areas. These applications include converters and inverters for solar arrays, power supplies, motor drives and hybrid cars and potential to reduce world wide electricity consumption by 10% by penetration into these and other energy conversion areas. The DoD applications that will benefit from the reduced size, weight, cost and enhanced power management capability include electric drives, radar power supplies and transformers on ships, advanced aircraft power converters and generation equipment and efficient ground based hybrid combat vehicles.

Keywords:
GaN, low switching resistance, high voltage kV class, Positive threshold voltage, high frequency 1 MHz